Abstract
The Stranski-Krastanov growth mode of Ga on the InP(100) surface is reexamined by electron-energy-loss spectroscopy and other surface-sensitive techniques. The formation of GaP on top of the InP surface as the result of the Ga-In exchange reaction is postulated from the experimental evidence, and the energy-band discontinuity between InP and GaP is estimated.
- Received 14 May 1987
DOI:https://doi.org/10.1103/PhysRevB.36.7660
©1987 American Physical Society
