Abstract
The energy band gaps and substitutional deep impurity levels of metastable alloys are predicted. As a function of decreasing alloy composition x the indirect band structure of semiconducting Ge first becomes direct (indicating that may have applications as an infrared detector) and then metallic. Doping anomalies commonly occur as x decreases. Between x≃0.4 and x≃0.8, the Gunn effect should occur.
- Received 21 May 1987
DOI:https://doi.org/10.1103/PhysRevB.36.7994
©1987 American Physical Society