Abstract
A quantum-well wire was fabricated with use of local intermixing of a GaAs-As single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.
- Received 22 September 1987
DOI:https://doi.org/10.1103/PhysRevB.37.2774
©1988 American Physical Society