Direct-energy-gap dependence on Al concentration in AlxGa1xAs

C. Bosio, J. L. Staehli, M. Guzzi, G. Burri, and R. A. Logan
Phys. Rev. B 38, 3263 – Published 15 August 1988
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Abstract

The direct exciton energy at 2 K in AlxGa1xAs epitaxial layers (0.10<x<0.75) has been determined by optical transmission measurements. Microprobe analysis has been employed for the evaluation of the aluminum concentration. From these data, the direct-energy-gap dependence on x has been obtained; its comparison with the literature clearly shows that the relation EgapΓ(x) commonly used in the optical determination of the alloy concentration must be revised. Contrary to older evaluations, our determination of the nonlinear contribution to EgapΓ(x) agrees with the theoretically predicted values.

  • Received 3 February 1988

DOI:https://doi.org/10.1103/PhysRevB.38.3263

©1988 American Physical Society

Authors & Affiliations

C. Bosio and J. L. Staehli

  • Institut de Physique Appliquée, Ecole Polytechnique Fédérale, PH-Ecublens, CH-1015 Lausanne, Switzerland

M. Guzzi

  • Dipartimento di Fisica, Università degli Studi di Milano, Via Celoria 16, I-20133 Milano, Italy

G. Burri

  • Institut de Physique Expérimentale de l’Université, BSP-Dorigny, CH-1015 Lausanne, Switzerland

R. A. Logan

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 38, Iss. 5 — 15 August 1988

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