Electron-spin resonance in the two-dimensional electron gas of GaAs-AlxGa1xAs heterostructures

M. Dobers, K. v. Klitzing, and G. Weimann
Phys. Rev. B 38, 5453 – Published 15 September 1988
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Abstract

Electron-spin resonance affects the magnetoresistivity of GaAs-AlxGa1xAs heterostructures. With microwave frequencies of up to 70 GHz we studied systematically the spin splitting of the Landau levels in magnetic fields up to 14.5 T. The resonances within a certain Landau level are only observed at magnetic field values where the Fermi level is located between the corresponding spin levels. The spin splitting of a Landau level is an exact quadratic function of the magnetic field and its extrapolation to zero magnetic field leads to vanishing spin splitting. The g factors depend on the magnetic field and the Landau level index as follows: g(B,N)=g0-c(N+(1/2)B, where g0 and c are sample-dependent constants.

  • Received 22 February 1988

DOI:https://doi.org/10.1103/PhysRevB.38.5453

©1988 American Physical Society

Authors & Affiliations

M. Dobers and K. v. Klitzing

  • Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, Postfach 80 06 65, D-7000 Stuttgart 80, Federal Republic of Germany

G. Weimann

  • Forschungsinstitut der Deutschen Bundespost beim Fernmeldetechnischen Zentralamt, Postfach 5000, D-6100 Darmstadt, Federal Republic of Germany

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Vol. 38, Iss. 8 — 15 September 1988

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