Correlation of the 5.0- and 7.6-eV absorption bands in <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msub><mrow><mi mathvariant="normal">SiO</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> with oxygen vacancy

Ryoichi Tohmon; Hiroyasu Mizuno; Yoshimichi Ohki; Kotoku Sasagane; Kaya Nagasawa; Yoshimasa Hama

doi:10.1103/PhysRevB.39.1337

Correlation of the 5.0- and 7.6-eV absorption bands in ${SiO}_{2}$ with oxygen vacancy

Ryoichi Tohmon, Hiroyasu Mizuno, Yoshimichi Ohki, Kotoku Sasagane, Kaya Nagasawa, and Yoshimasa Hama

Phys. Rev. B 39, 1337 – Published 15 January 1989

Abstract

Various uv and vacuum-uv optical-absorption bands found in as-manufactured high-purity ${SiO}_{2}$ glass were studied. Two types of absorption bands were found near 5.0 eV, one of which is attributed to the oxygen vacancy (?Si-Si?). The absorption band at 7.6 eV is also found to be caused by the same oxygen vacancy. Observation of the decay lifetime of photoluminescence and calculations using the ab initio molecular-orbital program show that the 7.6-eV band is caused by a singlet-to-singlet transition, while the 5.0-eV band is caused by a singlet-to-triplet transition.