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Evidence for spin splitting in InxGa1xAs/In0.52Al0.48As heterostructures as B0

B. Das, D. C. Miller, S. Datta, R. Reifenberger, W. P. Hong, P. K. Bhattacharya, J. Singh, and M. Jaffe
Phys. Rev. B 39, 1411(R) – Published 15 January 1989
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Abstract

The splitting in zero magnetic field between the up- and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different InxGa1xAs/In0.52Al0.48As modulation-doped heterostructures with high electron densities [ns(1.51.8)×1012 cm2]. We have observed a characteristic beating modulation in the amplitude of the Shubnikov-de Haas oscillations in this system and up to six nodes have been measured in the Shubnikov-de Haas data for magnetic fields in the range 0.15 T<B<1.0 T. Analysis of these data indicates that one subband is primarily occupied and the two beating frequencies arise from a spin splitting of the lowest subband. A spin splitting of 1.5-2.5 meV as B0 is deduced from the data. For magnetic fields applied at an angle θ to the interface, the beat positions scale as cosθ for small angles but increase steeply after a critical angle.

  • Received 19 April 1988

DOI:https://doi.org/10.1103/PhysRevB.39.1411

©1989 American Physical Society

Authors & Affiliations

B. Das, D. C. Miller, and S. Datta

  • School of Electrical Engineering, Purdue University, West Lafayette, Indiana 47907

R. Reifenberger

  • Department of Physics, Purdue University, West Lafayette, Indiana 47907

W. P. Hong, P. K. Bhattacharya, J. Singh, and M. Jaffe

  • Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, Michigan 48109

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Vol. 39, Iss. 2 — 15 January 1989

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