Band gaps and spin-orbit splitting of ordered and disordered AlxGa1xAs and GaAsxSb1x alloys

Su-Huai Wei and Alex Zunger
Phys. Rev. B 39, 3279 – Published 15 February 1989
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Abstract

Spontaneous long-range ordering of the otherwise disordered isovalent semiconductor alloys AxB1xC has been recently observed in numerous III-V alloy systems exhibiting the CuAu-I, CuPt, and chalcopyrite structures. We present a theory for the ordering-induced changes in the Brillouin-zone-center electronic properties, with application to the AlxGa1xAs and GaAsxSb1x alloys. The dominant effect for these systems is shown to be level repulsion between different-symmetry states of the binary constituents which fold into equal-symmetry states in the ordered ternary structures. Strong variations in the band gaps, spin-orbit splittings, and charge densities among the three basic ordered structures reflect the different magnitudes of the symmetry-enforced coupling between the folded states. An extension of the model to the disordered alloys yields good agreement with the observed optical bowing parameters for the fundamental gaps; however, the positive (downward concave) bowing of the spin-orbit splitting observed in some common-cation semiconductor alloy remains an unexplained puzzle.

  • Received 1 August 1988

DOI:https://doi.org/10.1103/PhysRevB.39.3279

©1989 American Physical Society

Authors & Affiliations

Su-Huai Wei and Alex Zunger

  • Solar Energy Research Institute, Golden, Colorado 80401

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Issue

Vol. 39, Iss. 5 — 15 February 1989

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