An electron-spin-resonance investigation on n-type (P-doped) and an electron-nuclear double-resonance (ENDOR) investigation on p-type (B- and Al-doped) Czochralski-grown oxygen-rich Si was performed after annealing at 460 °C and formation of the heat-treatment centers Si-NL8 and Si-NL10. The NL10 defects have different structures influenced by the silicon dopants in contrast to NL8. It is shown that a recent suggestion that NL10 could be an acceptor state of NL8 is not convincing.

• Received 5 December 1988

DOI:https://doi.org/10.1103/PhysRevB.39.7978