Electron Shielding in Doped Semiconductors

C. S. Lam and Y. P. Varshni
Phys. Rev. B 4, 4452 – Published 15 December 1971
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Abstract

The binding energy of an electron bound to two ionized impurity atoms is calculated as a function of the screening parameter δ, which occurs in the screeened Coulomb potential. The binding energy is found to diminish with increase in δ, ultimately becoming zero at δ1.254. The role played by such a system in the Mott transition is discussed.

  • Received 29 March 1971

DOI:https://doi.org/10.1103/PhysRevB.4.4452

©1971 American Physical Society

Authors & Affiliations

C. S. Lam and Y. P. Varshni

  • Department of Physics, University of Ottawa, Ottawa 2, Canada

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Issue

Vol. 4, Iss. 12 — 15 December 1971

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