Abstract
It is shown that in doped zero-gap semiconductors like , the intraband part of the static screening function is considerably decreased from that of free electrons at large momentum transfer by the -like character of the conduction-band wave function. However, it is also shown that this large screening loss produces a relatively small change in the ionized-impurity-limited mobility.
- Received 26 October 1970
DOI:https://doi.org/10.1103/PhysRevB.4.664
©1971 American Physical Society