Thomas-Fermi theory of δ-doped semiconductor structures: Exact analytical results in the high-density limit

L. Ioriatti
Phys. Rev. B 41, 8340 – Published 15 April 1990
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Abstract

The nonlinear Thomas-Fermi formulation of δ doping is proven to represent an exactly solvable model which is equivalent to the Hartree model in a wide range of doping densities. Analytical solutions to the eigenvalue problem of Schrödinger’s equation in the Thomas-Fermi field are proven to exist and to represent the exact solutions to the many-body inhomogeneous electron system in the limit of high densities.

  • Received 31 October 1989

DOI:https://doi.org/10.1103/PhysRevB.41.8340

©1990 American Physical Society

Authors & Affiliations

L. Ioriatti

  • Departamento de Física e Ciência dos Materiais, Instituto de Física e Química de São Carlos, Universidade de São Paulo, Caixa Postal 369, 13560 São Carlos, São Paulo, Brazil

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Vol. 41, Iss. 12 — 15 April 1990

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