Energy-loss rates of two-dimensional electrons at a GaAs/AlxGa1xAs interface

Y. Ma, R. Fletcher, E. Zaremba, M. D’Iorio, C. T. Foxon, and J. J. Harris
Phys. Rev. B 43, 9033 – Published 15 April 1991
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Abstract

We have used low-field de Haas–Shubnikov oscillations in the resistivity to determine the electron temperatures of a two-dimensional electron gas subjected to various heating currents. This was done at many values of the electron density from 5.5×1015 to 10×1015 m2 that were incrementally induced by the persistent-photoconductivity effect. The onset of second-subband occupation is clearly reflected in a large rise in energy-loss rates. The variations of the energy-loss rate with both temperature and electron density are well reproduced by detailed numerical calculations using values of deformation-potential and piezoelectric coupling parameters consistent with bulk measurements. The calculations also show that there is a transition from the low- to high-temperature behavior in the liquid4He temperature range. In this region the energy-loss rates vary roughly as the cube of the temperature, a result often observed experimentally but one which is not of fundamental significance. At the lowest temperatures the behavior should be dominated by the piezoelectric interaction which is characterized by a T5 law. The present experimental data show the transition from T3 to a higher-power law as the temperature is decreased, in accordance with the theoretical predictions.

  • Received 24 September 1990

DOI:https://doi.org/10.1103/PhysRevB.43.9033

©1991 American Physical Society

Authors & Affiliations

Y. Ma, R. Fletcher, and E. Zaremba

  • Department of Physics, Queen’s University at Kingston, Kingston, Ontario, Canada K7L 3N6

M. D’Iorio

  • National Research Council, Institute of Microstructure Sciences, Ottawa, Ontario, Canada K1A 0R6

C. T. Foxon and J. J. Harris

  • Philips Research Laboratories, Redhill, Surrey RH1 5HA, England

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Vol. 43, Iss. 11 — 15 April 1991

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