Strain energy and stability of Si-Ge compounds, alloys, and superlattices

James E. Bernard and Alex Zunger
Phys. Rev. B 44, 1663 – Published 15 July 1991
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Abstract

First-principles total-energy pseudopotential calculations are carried out for Si, Ge, zinc-blende-structure SiGe, (Si2)p/(Ge2)p superlattices in various layer orientations G and with various choices of substrate lattice parameter as, and for the Si0.5Ge0.5 random alloy. A subset of the results is used to construct an energy model, incorporating both strain (via an anharmonic valence force field) and chemical interactions (via a rapidly convergent cluster expansion) that closely reproduces the first-principles results, including those not used as input to the model. The model is applied to the study of larger superlattices than are amenable to first-principles treatment, revealing trends in (i) constituent strain energies, (ii) interfacial ‘‘strain-relief’’ relaxation energies, and (iii) interfacial chemical energies. The analysis reveals the major regularities in the dependence of superlattice stability on {p,G,as}, and permits investigation of the nature of interactions at interfaces, including the substrate-film interface.

  • Received 28 December 1990

DOI:https://doi.org/10.1103/PhysRevB.44.1663

©1991 American Physical Society

Authors & Affiliations

James E. Bernard

  • 2113 West Creighton Drive, Golden, Colorado 80401

Alex Zunger

  • Solar Energy Research Institute, Golden, Colorado 80401

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Issue

Vol. 44, Iss. 4 — 15 July 1991

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