Partial density of Mn 3d states and exchange-splitting changes in Zn1xMnxY (Y=S,Se,Te)

R. Weidemann, H.-E. Gumlich, M. Kupsch, H.-U. Middelmann, and U. Becker
Phys. Rev. B 45, 1172 – Published 15 January 1992
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Abstract

Mn 3d states in Zn1xMnxY (Y=S,Se,Te) have been investigated using resonant synchrotron-radiation photoemission at the Mn 3p-3d threshold. We observe chemical trends due to anion substitution for the main Mn 3d photoemission feature at 3.5, 3.6, and 3.8 eV below the valence-band maximum as well as for the d(↑)-d(↓) exchange splitting for Zn0.81Mn0.19S, Zn0.81Mn0.19Se, and Zn0.68Mn0.32Te, respectively. The size of relaxation effects associated with the resonant-photoemission process is derived. Valence-band offsets of 0.3 eV are found between the semimagnetic Zn compounds and their parent binary alloys.

  • Received 25 June 1991

DOI:https://doi.org/10.1103/PhysRevB.45.1172

©1992 American Physical Society

Authors & Affiliations

R. Weidemann, H.-E. Gumlich, M. Kupsch, and H.-U. Middelmann

  • Fachbereich Physik, Technische Universität Berlin, Hardenbergstrasse 36, D-1000 Berlin 12, Germany

U. Becker

  • Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-1000 Berlin 33, Germany

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Vol. 45, Iss. 3 — 15 January 1992

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