Electronic charge distribution in crystalline silicon

Moshe Deutsch
Phys. Rev. B 45, 646 – Published 1 January 1992; Erratum Phys. Rev. B 46, 607 (1992)
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Abstract

Using the multipole-expansion formalism and recently published millielectron volt-level-accuracy x-ray structure factors, a detailed description of the crystal-bound silicon atom is derived. A 0.5% expansion of the L shell is detected, in addition to the known ∼6% expansion of the M shell. A nonrigid thermal motion of the atom is also found, with the valence charge vibrating with a much reduced amplitude. Strong evidence is also found for a twofold reduction over the theoretical prediction for the magnitude of the anharmonic force constant in the effective one-atom potential. The R factor of our improved model is only 50% that of the best previously published one, and the goodness of fit is close to unity, indicating that the model exhausts the accuracy of the measured data. Deformation and valence-charge-density maps are presented and found to be in good agreement with previous results. Wave-function- and model-specific influences such as wave-function quality and relativistic and exchange-potential effects are also discussed. It is concluded that their influence on the conclusions of the present study is marginal.

  • Received 20 March 1991

DOI:https://doi.org/10.1103/PhysRevB.45.646

©1992 American Physical Society

Erratum

Authors & Affiliations

Moshe Deutsch

  • Department of Physics, Bar-Ilan University, Ramat-Gan 52100, Israel

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Issue

Vol. 45, Iss. 2 — 1 January 1992

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