Nature and origin of the 5-eV band in SiO2:GeO2 glasses

Hideo Hosono, Yoshihiro Abe, Donald L. Kinser, Robert A. Weeks, Kenichi Muta, and Hiroshi Kawazoe
Phys. Rev. B 46, 11445 – Published 1 November 1992
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Abstract

The sources of an absorption band at ∼5 eV observed in SiO2:GeO2 and GeO2 glasses have not been unambiguously identified. Results reported here are consistent with the source of two types of neutral oxygen vacancies. Samples of 95SiO2:5GeO2 and 90SiO2:10GeO2 were prepared by a chemical vapor deposition soot-remelting method. Optical-absorption and electron paramagnetic resonance spectra were measured. An absorption band centered at 5 eV in as-prepared SiO2:GeO2 glasses is composed of two components. One has a peak at 5.06 eV and a FWHM (full width at half maximum) of 0.38 eV. Illumination with uv light bleached this band, and generated Ge E centers. A linear relation was found between the decrement in the intensity of the 5.06-eV component and the concentrations of uv-induced Ge E centers. This relation is a basis for attributing the defect responsible for this component to the precursors of uv-induced Ge E centers. We propose that the 5.06-eV band is due to neutral oxygen monovacancies (NOV’s) coordinated by two Ge ions. The oscillator strength of this band was evaluated to be approximately 0.4±0.1 assuming that the NOV’s are converted into Ge E centers by absorption of uv quanta. The activation energy for this conversion process was of the order of 102 eV.

The second component of the absorption spectra has a peak at 5.16 eV and a FWHM of 0.48 eV. This band is not bleached but emits luminescence bands at 3.2 eV (intense) and 4.3 eV (weak) when irradiated with 5-eV light. Based on other research, we assign this band to Ge2+ ions coordinated by two oxygens and having two lone pair electrons (neutral oxygen divacancies). The concentrations of Ge2+ ions were much larger than those of the NOV’s and the ratio of the NOV’s to Ge2+ ions increases with increasing GeO2 content. A similarity was found in the characteristics of these two types of oxygen-deficient defects to those in SiO2 glasses.

  • Received 28 May 1992

DOI:https://doi.org/10.1103/PhysRevB.46.11445

©1992 American Physical Society

Authors & Affiliations

Hideo Hosono and Yoshihiro Abe

  • Department of Materials Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Japan

Donald L. Kinser and Robert A. Weeks

  • Department of Materials Science and Engineering, Vanderbilt University, Nashville, Tennessee 37235

Kenichi Muta

  • Showa Electric Wire and Cable, Co., Ltd., Minami-Hashimoto, Sagamihara 299, Japan

Hiroshi Kawazoe

  • Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Nagatuta 4259, Midori-ku, Yokohama 227, Japan

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Vol. 46, Iss. 18 — 1 November 1992

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