Photon-stimulated desorption from CaF2 and BaF2 thin films grown epitaxially on GaAs(100) surfaces

W. Eberhardt, K. M. Colbow, Y. Gao, D. Rogers, and T. Tiedje
Phys. Rev. B 46, 12388 – Published 15 November 1992
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Abstract

Photon-stimulated desorption from thin films of CaF2 exhibit distinctly different desorption channels for ions depending on the site where the initial core hole was created. In addition to H+, the most prominent desorbed ionic species observed in CaF2 is F+. Upon the creation of a F 1s core exciton, there is enhanced F+ desorption compared with the ion yield for complete ionization of a F 1s electron. A similar enhancement is not observed at the fluorine edge in BaF2. In BaF2, the H+ ion yield is, to within an order of magnitude, the same as in CaF2, but HF+ ions are also observed. Excitation of Ca 2p and Ba 3d core excitons does not result in an additional desorption channel that directly leads to the production of ions, but rather the desorption is caused nonspecifically by enhancing the secondary electron current through the surface.

  • Received 18 May 1992

DOI:https://doi.org/10.1103/PhysRevB.46.12388

©1992 American Physical Society

Authors & Affiliations

W. Eberhardt

  • Institut für Festkörperforschung der Forschungszentrums Jülich G.m.b.H., Postfach 1913, D-5170 Jülich, Germany

K. M. Colbow, Y. Gao, and D. Rogers

  • Physics Department, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z1

T. Tiedje

  • Physics Department, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z1
  • Electrical Engineering Department, University of British Columbia, Vancouver, British Columbia, Canada V6T 1Z1

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Vol. 46, Iss. 19 — 15 November 1992

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