We have used x-ray photoelectron spectroscopy to measure valence-band offsets in situ for AlSb/ZnTe, AlSb/GaSb, and GaSb/ZnTe(100) heterojunctions grown by molecular-beam epitaxy. For the AlSb/ZnTe heterojunction, a valence-band offset Δ${\mathit{E}}_{\mathit{v}}$=0.42±0.07 eV was obtained. Our data indicated that an intermediate compound, containing Al and Te, was formed at the AlSb/ZnTe(100) interface. Measurements of the AlSb/GaSb and GaSb/ZnTe valence-band offsets demonstrated a clear vio- lation of band offset transitivity for the AlSb/GaSb/ZnTe material system, suggesting that chemical reactivity at the AlSb/ZnTe and GaSb/ZnTe interfaces can exert a significant influence on band offset values. Direct evidence of the influence of interfacial growth conditions on the AlSb/ZnTe and GaSb/ZnTe band offset values was also observed.

• Received 8 June 1992

DOI:https://doi.org/10.1103/PhysRevB.46.13379