This work reports on growth, characterization, and calculation of the electronic structure of GaAs-(Ga,In)P quantum wells, where the two semiconductors share neither a common anion nor a common cation. Metal organic molecular-beam epitaxy was the growth method that we used. The composition of the disordered alloy was close to 50 at. % indium. We have determined the valence-band offset in such structures. We have found Δ${\mathit{E}}_{\mathit{c}}$/Δ${\mathit{E}}_{\mathit{v}}$=0.4, and have calculated the influence of the spin-orbit split-off states on the light-hole confinement. We found that these deep valence states significantly reduce the light-hole confinement.

• Received 20 April 1992

DOI:https://doi.org/10.1103/PhysRevB.46.1886