Evolution of the low-energy excitations and dielectric function of Ba1xKxBiO3 (0≤x≤0.50)

Y. Y. Wang, H. Zhang, V. P. Dravid, D. Shi, D. G. Hinks, Y. Zheng, and J. D. Jorgensen
Phys. Rev. B 47, 14503 – Published 1 June 1993
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Abstract

Evolution of the low-energy excitations and dielectric function of Ba1xKxBiO3 (BKBO) single crystals in the doping range 0≤x≤0.50, i.e., spanning the semiconductor to superconductor regimes, is investigated by electron-energy-loss spectroscopy (EELS) with a cold-field-emission-gun transmission-electron microscope (cFEG TEM). A free-carrier plasmon in BKBO is observed by transmission EELS for x≥0.40 (superconductor phase), and a local excitation for x≤0.3 (insulator-semiconductor phase). The oscillator strength of the excitation in the low-loss region increases substantially and abruptly between x=0.30 and x=0.40, signaling the semiconductor-metal transition. Subtle but important changes are observed in the higher-loss regions (bulk plasma) with K doping. The evolution of the low-energy excitations and dielectric function of BKBO is compared to that of cuprate superconductors.

  • Received 23 February 1993

DOI:https://doi.org/10.1103/PhysRevB.47.14503

©1993 American Physical Society

Authors & Affiliations

Y. Y. Wang, H. Zhang, and V. P. Dravid

  • Department of Materials Science and Engineering, and Science and Technology Center for Superconductivity, Northwestern University, Evanston, Illinois 60208

D. Shi, D. G. Hinks, Y. Zheng, and J. D. Jorgensen

  • Materials Science Division, and Science and Technology Center for Superconductivity, Argonne National Laboratory, Argonne, Illinois 60439

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Vol. 47, Iss. 21 — 1 June 1993

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