• Rapid Communication

Critical conductivity exponent of Si:P in a magnetic field

Peihua Dai, Youzhu Zhang, Snezana Bogdanovich, and M. P. Sarachik
Phys. Rev. B 48, 4941(R) – Published 15 August 1993
PDFExport Citation

Abstract

The critical conductivity exponent of Si:P changes from near 1/2 in zero field to 0.86±0.15 in a magnetic field of 8 T, consistent with the theoretical expectation of 1. According to recent theory, similar behavior found earlier in Si:B, where spin-orbit scattering is strong, corresponds to the universality class for magnetic impurities. These measurements in Si:P thus constitute a clear determination of the critical conductivity exponent near the metal-insulator transition in the universality class for high magnetic field.

  • Received 14 May 1993

DOI:https://doi.org/10.1103/PhysRevB.48.4941

©1993 American Physical Society

Authors & Affiliations

Peihua Dai, Youzhu Zhang, Snezana Bogdanovich, and M. P. Sarachik

  • Physics Department, City College of the City University of New York, New York, New York 10031

References (Subscription Required)

Click to Expand
Issue

Vol. 48, Iss. 7 — 15 August 1993

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×