Two-dimensional islanding atop stressed solid helium and epitaxial films

Michael Grinfeld
Phys. Rev. B 49, 8310 – Published 15 March 1994
PDFExport Citation

Abstract

We discuss the role of stress in destabilizing flat surfaces of thin solid films. The presence of this instability in stressed He4 and several heteroepitaxial films is widely acknowledged and well documented. We pay special attention to the study of possible in-plane morphologies of the islands which appear as a result of the stress-driven destabilization of flat traction-free interfaces. We also discuss the critical thickness at which these morphologies change.

  • Received 27 October 1993

DOI:https://doi.org/10.1103/PhysRevB.49.8310

©1994 American Physical Society

Authors & Affiliations

Michael Grinfeld

  • Department of Mathematics, Rutgers University, New Brunswick, New Jersey 08903

References (Subscription Required)

Click to Expand
Issue

Vol. 49, Iss. 12 — 15 March 1994

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×