Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001)

G. Bratina; L. Vanzetti; L. Sorba; G. Biasiol; A. Franciosi; M. Peressi; S. Baroni

doi:10.1103/PhysRevB.50.11723

Lack of band-offset transitivity for semiconductor heterojunctions with polar orientation: ZnSe-Ge(001), Ge-GaAs(001), and ZnSe-GaAs(001)

G. Bratina, L. Vanzetti, L. Sorba, G. Biasiol, A. Franciosi, M. Peressi, and S. Baroni

Phys. Rev. B 50, 11723 – Published 15 October 1994

Abstract

The fabrication of pseudomorphic Ge layers in the interface region of ZnSe-GaAs heterostructures was recently shown to be an effective method of reducing the overall valence-band discontinuity. We investigate here the microscopic mechanism behind this effect, drawing on measurements and theoretical calculations of the band offsets for individual isolated heterojunctions between the different semiconductor constituents. We find that the formation of different interface configurations in individual neutral heterojunctions can account for the observed deviations from the predictions of the transitivity rule and hence for the effect of Ge interlayers.

Received 7 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.11723

Authors & Affiliations

G. Bratina, L. Vanzetti, L. Sorba, G. Biasiol, and A. Franciosi

Laboratorio Tecnologie Avanzate Superfici e Catalisi dell’Istituto Nazionale di Fisica della Materia, Area di Ricerca di Trieste, I-34012 Trieste, Italy,
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455

M. Peressi