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Origin of RHEED intensity oscillations during the growth of (Y,Dy)Ba2Cu3O7x thin films

V. S. Achutharaman, N. Chandrasekhar, Oriol T. Valls, and A. M. Goldman
Phys. Rev. B 50, 8122(R) – Published 15 September 1994
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Abstract

We propose a mechanism for the origin of RHEED intensity oscillations during the growth of (Y,Dy)Ba2Cu3O7 thin films. Surface relaxation and RHEED intensity recovery observed during the growth of these materials are ascribed predominantly to the diffusion of already formed (Y,Dy)Ba2Cu3O7 units rather than to the chemical reaction of the constituents to form a unit cell. The validity of the model is demonstrated by comparing the surface step densities determined from results of Monte Carlo simulations with RHEED intensity oscillations observed during pulsed laser deposition.

  • Received 21 June 1994

DOI:https://doi.org/10.1103/PhysRevB.50.8122

©1994 American Physical Society

Authors & Affiliations

V. S. Achutharaman, N. Chandrasekhar, Oriol T. Valls, and A. M. Goldman

  • Center for the Science and Application of Superconductivity and School of Physics and Astronomy, University of Minnesota, Minneapolis, Minnesota 55455

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Vol. 50, Iss. 11 — 15 September 1994

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