The current-voltage characteristics of porous-silicon structures are presented and discussed. Evidence is given that the forward and reverse currents show Schottky-junction-like behavior. Experimental measurements of reverse I-V curves at different ambient humidities demonstrate that the reverse current depends strongly on this parameter. The results are discussed in the light of generation-recombination processes in the porous-silicon depletion region. The presence of an inflection point in the reverse I-V curves is explained by the energy-band-gap difference between porous silicon and the crystalline silicon substrate.

• Received 11 October 1994

DOI:https://doi.org/10.1103/PhysRevB.51.1562