Abstract
We demonstrate by Raman scattering that the spin splitting in the conduction band of a GaAs/ As asymmetric quantum well is anisotropic and inequivalent along the [11¯] and [11] directions. This agrees with the results of tight-binding calculations. The Rashba contribution to the spin orientation induced by the asymmetric potential is of comparable magnitude to the bulk inversion-asymmetry-induced term. Hence, we obtain quantitative information on the origin of the spin orientation at the GaAs/As interface.
- Received 24 October 1994
DOI:https://doi.org/10.1103/PhysRevB.51.4707
©1995 American Physical Society