Multiple-scattering approach to the s-f model in ferromagnetic semiconductors above the Curie temperature

Masao Takahashi, Kazuhiro Mitsui, and Masakatsu Umehara
Phys. Rev. B 52, 16313 – Published 15 December 1995
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Abstract

For the s-f model in ferromagnetic semiconductors, it is necessary to treat simultaneously multiple scattering on the same site and scattering due to f spin correlation between different sites. In this paper, one-site multiple scattering is taken into account using a t-matrix formalism, and the exchange scattering via f spin correlation between different sites is treated using a two-spin correlation function and an appropriate decoupling scheme. The results show good agreement with those of the coherent potential approximation in the high-temperature limit. The calculated energy of the bottom of the band is reasonable, even at the Curie temperature (TC), for a wide range of IS/W, where W is the bandwidth of the conduction band and IS is the exchange interaction energy.

  • Received 31 July 1995

DOI:https://doi.org/10.1103/PhysRevB.52.16313

©1995 American Physical Society

Authors & Affiliations

Masao Takahashi and Kazuhiro Mitsui

  • Kanagawa Institute of Technology, 1030 Simo-Ogino, Atsugi, Kanagawa 243-02, Japan

Masakatsu Umehara

  • National Institute for Research in Inorganic Materials, 1-1 Namiki, Tsukuba, Ibaraki 305, Japan

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Issue

Vol. 52, Iss. 23 — 15 December 1995

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