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Excitonic exchange splitting and Stokes shift in Si nanocrystals and Si clusters

Toshihide Takagahara and Kyozaburo Takeda
Phys. Rev. B 53, R4205(R) – Published 15 February 1996
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Abstract

The size dependence of the electron-hole exchange interaction in Si nanocrystals is investigated and the excitonic exchange splitting is predicted to be as large as 300 meV in extremely small Si clusters. The exciton-phonon interaction in Si nanocrystals for acoustic phonon modes is formulated to calculate the Stokes shift and the Huang-Rhys factor. It is found that the observed onset energy of photoluminescence can be interpreted mainly in terms of the excitonic exchange splitting, although the contribution from the Stokes shift is not negligible. The importance of the self-consistent determination of the effective dielectric constant of Si clusters including the excitonic effect is demonstrated in view of the possibility of resolving the large discrepancy between theories and experiments concerning the size dependence of the exciton energy.

  • Received 27 November 1995

DOI:https://doi.org/10.1103/PhysRevB.53.R4205

©1996 American Physical Society

Authors & Affiliations

Toshihide Takagahara

  • NTT Basic Research Laboratories, 3-1, Morinosato Wakamiya, Atsugi, Kanagawa 243-01, Japan

Kyozaburo Takeda

  • Department of Materials Science and Engineering, School of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku, Tokyo 169, Japan

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Issue

Vol. 53, Iss. 8 — 15 February 1996

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