Negative magnetoresistance in p-type βFeSi2 single crystals in two regimes of variable-range hopping

K. Arushanov, K. G. Lisunov, U. Malang, Ch. Kloc, and E. Bucher
Phys. Rev. B 56, 1005 – Published 15 July 1997
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Abstract

Single crystals of p-type β-FeSi2 demonstrate the negative magnetoresistance below 40 K that increases with decreasing temperature and does not reach either a maximum or a saturation up to at least 12 kOe. This effect is observed in both the Mott and the Shklovskii-Efros variable-range hopping regimes. At fields below approximately 3–5 kOe (depending on the temperature) the magnetoresistance displays a quadratic dependence on the magnetic field, while at higher fields the dependence is linear. The experimental data are analyzed using two different approaches to the interference effects in hopping conductivity in a magnetic field.

  • Received 14 November 1996

DOI:https://doi.org/10.1103/PhysRevB.56.1005

©1997 American Physical Society

Authors & Affiliations

K. Arushanov

  • Institute of Applied Physics, Academy of Sciences of Moldova, 277028 Kishinev, Moldova
  • Faculty of Physics, University of Konstanz, P.O. Box 5560, D-78434 Konstanz, Germany

K. G. Lisunov

  • Institute of Applied Physics, Academy of Sciences of Moldova, 277028 Kishinev, Moldova

U. Malang, Ch. Kloc, and E. Bucher

  • Faculty of Physics, University of Konstanz, P.O. Box 5560, D-78434 Konstanz, Germany

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Vol. 56, Iss. 3 — 15 July 1997

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