Surface electrical conduction due to carrier doping into a surface-state band on Si(111)-3×3-Ag

Yuji Nakajima, Sakura Takeda, Tadaaki Nagao, Shuji Hasegawa, and Xiao Tong
Phys. Rev. B 56, 6782 – Published 15 September 1997
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Abstract

Photoemission spectroscopy has shown that each Ag atom in its two-dimensional adatom gas (2DAG) phase deposited on the Si(111)-3×3-Ag surface at room temperature donates one electron into an antibonding surface-state band of this substrate, resulting in a steep increase in electrical conductance through the band. The surface space-charge layer makes no contribution to the conductance increase by the 2DAG adsorption, estimated from the band-bending measurements. When the 2DAG nucleates into three-dimensional Ag microcrystals by further deposition beyond a critical supersaturation coverage, the carrier-doping effect vanishes, returning to a lower conductance. These results reveal that the surface state acts as a surface conduction band. The electron mobility in this band is estimated to be on the order of 10 cm2/V s.

  • Received 14 April 1997

DOI:https://doi.org/10.1103/PhysRevB.56.6782

©1997 American Physical Society

Authors & Affiliations

Yuji Nakajima, Sakura Takeda, Tadaaki Nagao, and Shuji Hasegawa

  • Department of Physics, School of Science, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan

Xiao Tong

  • Core Research for Evolutional Science and Technology, The Japan Science and Technology Corporation, Kawaguchi Center Building, Hon-cho 4-1-8, Kawaguchi, Saitama 332, Japan

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Vol. 56, Iss. 11 — 15 September 1997

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