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Quantized conductance of Si atomic wires

José-Luis Mozos, C. C. Wan, Gianni Taraschi, Jian Wang, and Hong Guo
Phys. Rev. B 56, R4351(R) – Published 15 August 1997
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Abstract

We have performed first-principles pesudopotential calculations of the quantum transport properties of a chain of Si atoms connected to the outside through long leads. By solving a three-dimensional quantum scattering problem we have computed the conductance for several atomic wires with up to eight Si atoms. The Si atomic wires are found to be metallic and we observed quantized conductance in units of 2e2/h. A conductance dip is found to develop near the onset of the second quantized plateau as the number of atoms increases, and this can be explained by the existence of a gap in the density of states when the atomic chain is infinitely long.

  • Received 16 April 1997

DOI:https://doi.org/10.1103/PhysRevB.56.R4351

©1997 American Physical Society

Authors & Affiliations

José-Luis Mozos, C. C. Wan, and Gianni Taraschi

  • Centre for the Physics of Materials and Department of Physics, McGill University, Montreal, Quebec, Canada H3A 2T8

Jian Wang

  • Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong, China

Hong Guo

  • Centre for the Physics of Materials and Department of Physics, McGill University, Montreal, Quebec, Canada H3A 2T8

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Issue

Vol. 56, Iss. 8 — 15 August 1997

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