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Transport properties and origin of ferromagnetism in (Ga,Mn)As

F. Matsukura, H. Ohno, A. Shen, and Y. Sugawara
Phys. Rev. B 57, R2037(R) – Published 15 January 1998
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Abstract

Magnetotransport properties of p-type ferromagnetic (Ga,Mn)As, a diluted magnetic semiconductor based on III-V semiconductors, are measured and the pd exchange between holes and Mn 3d spins is determined. The ferromagnetic transition temperatures calculated based on the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction using the exchange reproduce remarkably well the observed ferromagnetic transition temperatures, demonstrating that ferromagnetism of (Ga,Mn)As has its origin in the RKKY interaction mediated by holes.

  • Received 19 August 1997

DOI:https://doi.org/10.1103/PhysRevB.57.R2037

©1998 American Physical Society

Authors & Affiliations

F. Matsukura*, H. Ohno, A. Shen, and Y. Sugawara

  • Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University, Sendai 980-77, Japan

  • *Electronic address: f-matsu@riec.tohoku.ac.jp
  • Electronic address: ohno@riec.tohoku.ac.jp

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Vol. 57, Iss. 4 — 15 January 1998

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