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Localized exciton and its stimulated emission in surface mode from single-layer InxGa1xN

Akihiro Satake, Yasuaki Masumoto, Takao Miyajima, Tsunenori Asatsuma, Fumihiko Nakamura, and Masao Ikeda
Phys. Rev. B 57, R2041(R) – Published 15 January 1998
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Abstract

Exciton localization in InxGa1xN was studied. At 2 K, the time-integrated photoluminescence (PL) spectrum showed a Stokes shift from the absorption shoulder and broadening at the lower photon energy side. Site-selectively excited PL measurements determined the mobility edge. The exciton relaxation processes were studied by use of time-resolved PL spectroscopy. The PL decay time increased with the decrease of the detection-photon energy, indicating the dynamical features of exciton localization. In addition, we observed localized exciton luminescence turned into stimulated emission just below the mobility edge.

  • Received 11 June 1997

DOI:https://doi.org/10.1103/PhysRevB.57.R2041

©1998 American Physical Society

Authors & Affiliations

Akihiro Satake and Yasuaki Masumoto

  • Institute of Physics, University of Tsukuba, Tsukuba, Ibaraki 305, Japan

Takao Miyajima, Tsunenori Asatsuma, Fumihiko Nakamura, and Masao Ikeda

  • Research Center, Sony Corporation, Yokohama, Kanagawa 240, Japan

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Vol. 57, Iss. 4 — 15 January 1998

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