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Ordered stack of spin valves in a layered magnetoresistive perovskite

T. G. Perring, G. Aeppli, T. Kimura, Y. Tokura, and M. A. Adams
Phys. Rev. B 58, R14693(R) – Published 1 December 1998
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Abstract

The layered compound La22xSr1+2xMn2O7 (x=0.3) consists of bilayers of metallic MnO2 sheets separated by insulating material. The compound exhibits markedly anisotropic magnetoresistance at temperatures well below the three-dimensional magnetic ordering temperature Tc=90K in addition to colossal magnetoresistance around Tc. We present neutron-diffraction data which show that the magnetic structure of this material switches from antiferromagnetic stacking of the (ferromagnetically ordered) sheets in zero field to ferromagnetic stacking in a field of 1.5 T. To our knowledge, the data are the first to be collected on any manganite as a function of applied field, exactly as the magnetoresistance data themselves are collected. They provide a natural explanation of the low-field magnetoresistance in the ordered phase in terms of spin-polarized tunneling between the magnetic layers and suggest that the material is a bulk stack of spin-valve devices.

  • Received 31 August 1998

DOI:https://doi.org/10.1103/PhysRevB.58.R14693

©1998 American Physical Society

Authors & Affiliations

T. G. Perring

  • ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxon 0X11 0QX, United Kingdom

G. Aeppli

  • NEC Research Institute, 4 Independence Way, Princeton, New Jersey 08540

T. Kimura and Y. Tokura

  • Joint Research Center for Atom Technology (JRCAT), Tsukuba 305, Japan

M. A. Adams

  • ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxon 0X11 0QX, United Kingdom

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Vol. 58, Iss. 22 — 1 December 1998

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