Structural details and magnetic order of La1xSrxCoO3 (x<~0.3)

R. Caciuffo, D. Rinaldi, G. Barucca, J. Mira, J. Rivas, M. A. Señarís-Rodríguez, P. G. Radaelli, D. Fiorani, and J. B. Goodenough
Phys. Rev. B 59, 1068 – Published 1 January 1999
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Abstract

The crystallographic structure and the magnetic order of the distorted perovskite La1xSrxCoO3 (0.10<~x<~0.30) has been studied by neutron diffraction, high-resolution electron microscopy, and magnetic-susceptibility measurements. The results give direct evidence for an inhomogeneous distribution of the Sr2+ ions and the segregation of the material into hole-rich ferromagnetic regions and a hole-poor semiconducting matrix at lower values of x. The holes introduced by Sr doping are attracted to the Sr2+ ions where they stabilize to lowest temperatures an intermediate-spin state at neighboring trivalent cobalt. The antibonding e electrons so stabilized increase the mean unit-cell volume and are delocalized over the cobalt atoms of the cluster where they couple the localized t5 configurations ferromagnetically. Long-range ferromagnetic order between clusters is realized even for Sr doping as low as x=0.10. The transition to a spin glass state is observed only for Sr concentrations smaller than 0.10. The volume of a hole-rich cluster grows in a magnetic field, and the origin of the large negative magnetoresistance observed near TC for 0.15<~x<~0.25 appears to be due to a growth of the clusters to a percolation threshold. For x=0.30, the σ* band of the intermediate-spin state below TC is at the threshold of a transition from itinerant to polaronic conduction and, above TC, the system transforms smoothly to a cluster state.

  • Received 17 June 1998

DOI:https://doi.org/10.1103/PhysRevB.59.1068

©1999 American Physical Society

Authors & Affiliations

R. Caciuffo, D. Rinaldi, and G. Barucca

  • Istituto Nazionale per la Fisica della Materia and Dipartimento di Scienze dei Materiali e della Terra, Università di Ancona, Via Brecce Bianche I-60131, Ancona, Italy

J. Mira and J. Rivas

  • Departamento de Física Aplicada, Universidade de Santiago, E-15706 Santiago de Compostela, Spain

M. A. Señarís-Rodríguez

  • Departamento Quimica Fundamental e Industrial, Universidade da Coruña, E-15071 A Coruña, Spain

P. G. Radaelli

  • ISIS Facility, Rutherford Appleton Laboratory, OX11 0QX Chilton, United Kingdom

D. Fiorani

  • Istituto di Chimica dei Materiali, Consiglio Nazionale delle Ricerche, P.O.B. 10, I-00016 Monterotondo Stazione, Roma, Italy

J. B. Goodenough

  • Center for Materials Science and Engineering, University of Texas at Austin, Austin, Texas 78712-1063

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Issue

Vol. 59, Iss. 2 — 1 January 1999

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