Phonons in GaP quantum dots

Huaxiang Fu, V. Ozoliņš, and Alex Zunger
Phys. Rev. B 59, 2881 – Published 15 January 1999
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Abstract

The phonon structure of GaP quantum dots is studied using an atomistic potential model. The dot eigenmodes are obtained from a direct diagonalization of the dynamical matrix and classified using an efficient dual-space analysis method. Our calculations provide a theoretical explanantion for several experimental observations. (1) Depending on the spatial localization, the phonon modes of dots are either dot-interior (bulklike) or surfacelike. (2) The frequencies of the dot-interior modes can be qualitatively described by the “truncated crystal method” using a single branch and a single wave vector of the bulk-phonon dispersion. In contrast, the surface modes cannot be described by this model. (3) The dot-interior modes have a dominant bulk parentage from a specific part of the Brillouin zone, while the surface modes do not. (4) The frequencies of the bulklike Γ-derived longitudinal optical (LO) and transverse optical (TO) phonon modes are found to decrease with decreasing dot size. This decrease reflects the downward dispersion of the bulk optical-phonon branches away from the Γ point. (5) The surface modes located between the bulk TO- and LO-phonon bands have a significant bulk Γ character, and are thus Raman detectable. (6) The dot-interior modes exhibit only a slight LO/TO mode mixing, while the surfacelike modes show a strong mode mixing.

  • Received 10 August 1998

DOI:https://doi.org/10.1103/PhysRevB.59.2881

©1999 American Physical Society

Authors & Affiliations

Huaxiang Fu, V. Ozoliņš, and Alex Zunger

  • National Renewable Energy Laboratory, Golden, Colorado 80401

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Vol. 59, Iss. 4 — 15 January 1999

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