Time-resolved studies of single semiconductor quantum dots

Valéry Zwiller, Mats-Erik Pistol, Dan Hessman, Rolf Cederström, Werner Seifert, and Lars Samuelson
Phys. Rev. B 59, 5021 – Published 15 February 1999
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Abstract

We present time-resolved optical studies of single self-assembled quantum dots. The dots were obtained by Stranski-Krastanow growth of InP on Ga0.5In0.5P. A selective technique based on etching after electron-beam lithography, combined with the use of an optical microscope to enhance the spatial resolution of a time-resolved photoluminescence system, enabled the observation of single quantum dots. The emission linewidth of a single InP dot is observed to be around 3 meV. The evolution of the time-resolved photoluminescence spectra was studied as a function of excitation intensity. Under intense pulsed excitation the decay is no more a simple exponential due to feeding from higher energy levels, as a result of state filling. A four-level rate equation system is successfully used to model the results.

  • Received 4 February 1998

DOI:https://doi.org/10.1103/PhysRevB.59.5021

©1999 American Physical Society

Authors & Affiliations

Valéry Zwiller*, Mats-Erik Pistol, Dan Hessman, Rolf Cederström, Werner Seifert, and Lars Samuelson

  • Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden

  • *Electronic address: Valery.Zwiller@ftf.lth.se

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Vol. 59, Iss. 7 — 15 February 1999

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