Compositional dependence of the elastic constants and the lattice parameter of AlxGa1xAs

S. Gehrsitz, H. Sigg, N. Herres, K. Bachem, K. Köhler, and F. K. Reinhart
Phys. Rev. B 60, 11601 – Published 15 October 1999
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Abstract

Near infrared Brillouin scattering and high resolution x-ray diffraction is used for a precise determination of the elastic constants and the relaxed lattice parameters of AlxGa1xAs epitaxial layers (0.1<~x<~1.0). The composition of the layers is specified by inductively coupled plasma atomic emission spectroscopy, photoluminescence, and Raman spectroscopy. For the elastic constants we get a composition independent value of 118.9±0.7GPa for C11, a nonlinear increase in C12 and a linear decrease in C44 with increasing Al composition. The Poisson ratio shows a linear increase for x<0.8 and a downward bowing for higher Al concentrations to the AlAs value of ν=0.325±0.004. The effect of lattice mismatch induced strain on the elastic properties is investigated on free standing epitaxial layers. The trend in ionicity from the GaAs to the AlAs bonds are deduced from phenomenological expressions for the bond-bending and bond-stretching forces which are calculated from the elastic constants. The lattice parameters of the unstrained crystals are obtained from the measured full metric of the tetragonally strained layers and the Poisson ratios. The combined results of Brillouin scattering, x-ray diffraction, and compositional analysis confirm the deviation of the AlxGa1xAs lattice parameter from Vegard’s law, and provides the first direct and accurate determination of the quadratic bowing parameter.

  • Received 1 March 1999

DOI:https://doi.org/10.1103/PhysRevB.60.11601

©1999 American Physical Society

Authors & Affiliations

S. Gehrsitz and H. Sigg

  • Paul Scherrer Institut, Labor für Mikro- and Nanostrukturen, Badenerstrasse 569, CH-8048 Zürich, Switzerland

N. Herres, K. Bachem, and K. Köhler

  • Fraunhofer Institut für Angewandte Festkörperforschung, Tullastrasse 72, D-79108 Freiburg im Breisgau, Germany

F. K. Reinhart

  • Institute de Micro- et Optoelectronique, EPFL, CH-1015 Lausanne, Switzerland

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Issue

Vol. 60, Iss. 16 — 15 October 1999

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