Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals

Atsushi Mimura; Minoru Fujii; Shinji Hayashi; Dmitri Kovalev; Frederick Koch

doi:10.1103/PhysRevB.62.12625

Photoluminescence and free-electron absorption in heavily phosphorus-doped Si nanocrystals

Atsushi Mimura, Minoru Fujii, Shinji Hayashi, Dmitri Kovalev, and Frederick Koch

Phys. Rev. B 62, 12625 – Published 15 November 2000

Abstract

Heavily phosphorus-doped Si nanocrystals several nanometers in diameter are studied by photoluminescence (PL) and optical absorption spectroscopy. It is demonstrated that P doping results in the quenching of the PL. The quenching is accompanied by the appearance of the optical absorption in the infrared range. The absorption was assigned to the intravalley transitions of free electrons generated by P doping (free-electron absorption). The generation of free electrons and the resultant three-body Auger recombination of excitons is considered to be responsible for the observed PL quenching.

Received 24 May 2000

DOI:https://doi.org/10.1103/PhysRevB.62.12625

Authors & Affiliations

Atsushi Mimura

Division of Mathematical and Material Science, The Graduate School of Science and Technology, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan

Minoru Fujii^* and Shinji Hayashi

Department of Electrical and Electronics Engineering, Faculty of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501, Japan

Dmitri Kovalev and Frederick Koch

Technische Universität München, Physik-Department E16, D-85747 Garching, Germany

^*Author to whom correspondence should be addressed. Email address: fujii@eedept.kobe-u.ac.jp

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Vol. 62, Iss. 19 — 15 November 2000

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Physical Review B

covering condensed matter and materials physics