Surface roughening in shadowing growth and etching in 2+1 dimensions

Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang
Phys. Rev. B 62, 2118 – Published 15 July 2000
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Abstract

Through numerical calculations and Monte Carlo simulations, we examine the roughening behavior of a shadowing model, with lateral growth, for (2+1)-dimensional systems. The results show that the roughening growth exponent β=1 for growth and β=0 for etching. For the Monte Carlo simulation of the growth model, tall columns are formed, and the correlation length obeys ξ(tt0)1/z, with 1/z=0.93±0.1. For the Monte Carlo simulation of the etching model, we obtain 1/z=0, and the height-height correlation function H(r) is proportional to log(r) for rξ. The results are compared to previous computational studies of shadowing and to experimental studies of sputter deposition.

  • Received 18 October 1999

DOI:https://doi.org/10.1103/PhysRevB.62.2118

©2000 American Physical Society

Authors & Affiliations

Jason T. Drotar, Y.-P. Zhao, T.-M. Lu, and G.-C. Wang

  • Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180-3590

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Vol. 62, Iss. 3 — 15 July 2000

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