Reduction of electron tunneling current due to lateral variation of the wave function

W. H. Butler, X.-G. Zhang, T. C. Schulthess, and J. M. MacLaren
Phys. Rev. B 63, 092402 – Published 29 January 2001
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Abstract

Electron tunneling in solids is usually envisioned in terms of a simple barrier model based on free electrons tunneling through a region of homogeneous potential. We point out that this model neglects the variation of the wave function in the plane of the interface and show that oscillations of the wave function parallel to the interface increase its rate of decay perpendicular to the interface. This simple observation has important implications for spin-dependent tunneling and may explain why s electrons” seem to tunnel much more readily than d electrons.”

  • Received 8 August 2000

DOI:https://doi.org/10.1103/PhysRevB.63.092402

©2001 American Physical Society

Authors & Affiliations

W. H. Butler, X.-G. Zhang, and T. C. Schulthess

  • Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6114

J. M. MacLaren

  • Department of Physics, Tulane University, New Orleans, Louisiana 70018

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Issue

Vol. 63, Iss. 9 — 1 March 2001

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