Diameter dependence of the Raman <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mi>D</mi></math></span>-band in isolated single-wall carbon nanotubes

M. A. Pimenta; A. Jorio; S. D. M. Brown; A. G. Souza Filho; G. Dresselhaus; J. H. Hafner; C. M. Lieber; R. Saito; M. S. Dresselhaus

doi:10.1103/PhysRevB.64.041401

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Diameter dependence of the Raman $D$ -band in isolated single-wall carbon nanotubes

M. A. Pimenta, A. Jorio, S. D. M. Brown, A. G. Souza Filho, G. Dresselhaus, J. H. Hafner, C. M. Lieber, R. Saito, and M. S. Dresselhaus

Phys. Rev. B 64, 041401(R) – Published 21 June 2001

Abstract

Raman D-band spectra are reported for several different SWNTs using two different laser energies ${(E}_{laser} = 1.58$ and 2.41 eV). At a fixed $E_{laser},$ individual isolated SWNTs exhibit different diameter-dependent D-band frequencies $ω_{D}$ around an average value. For both semiconducting and metallic tubes, $ω_{D}$ decreases with decreasing nanotube diameter, though $ω_{D}$ for isolated metallic SWNTs is higher than for isolated semiconducting SWNTs. The average D-band frequency depends linearly on $E_{laser},$ as previously observed for SWNT bundles, suggesting that the D-band in SWNTs is activated by defects or by the finite size of the SWNTs.

Received 23 February 2001

DOI:https://doi.org/10.1103/PhysRevB.64.041401

Authors & Affiliations

M. A. Pimenta¹, A. Jorio², S. D. M. Brown², A. G. Souza Filho^2,3, G. Dresselhaus⁴, J. H. Hafner⁵, C. M. Lieber⁵, R. Saito⁶, and M. S. Dresselhaus^2,7

¹Departmento de Física, Universidade Federal de Minas Gerais, CP 702, 30123-970 Belo Horizonte, Brazil
²Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307
³Departamento de Física, Universidade Federal do Ceará, Fortaleza-CE, 60455-760 Brazil
⁴Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307
⁵Department of Chemistry, Harvard University, Cambridge, Massachusetts 02138
⁶Department of Electronic Engineering, University of Electro-Communications, Tokyo 182-8585, Japan
⁷Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307

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Vol. 64, Iss. 4 — 15 July 2001

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