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Large thermoelectric power factor in TiS2 crystal with nearly stoichiometric composition

H. Imai, Y. Shimakawa, and Y. Kubo
Phys. Rev. B 64, 241104(R) – Published 10 December 2001
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Abstract

A TiS2 crystal with a layered structure was found to have a large thermoelectric power factor. The in-plane power factor S2/ρ at 300 K is 37.1μW/K2cm with resistivity (ρ) of 1.7 mΩ cm and thermopower (S) of -251 μV/K, and this value is comparable to that of the best thermoelectric material, Bi2Te3 alloy. The electrical resistivity shows both metallic and highly anisotropic behaviors, suggesting that the electronic structure of this TiS2 crystal has a quasi-two-dimensional nature. The large thermoelectric response can be ascribed to the large density of states just above the Fermi energy and inter-valley scattering. In spite of the large power factor, the figure of merit ZT of TiS2 is 0.16 at 300 K, because of relatively large thermal conductivity, 68 mW/K cm. However, most of this value comes from reducible lattice contribution. Thus, ZT can be improved by reducing lattice thermal conductivity, e.g., by introducing a rattling unit into the inter-layer sites.

  • Received 23 August 2001

DOI:https://doi.org/10.1103/PhysRevB.64.241104

©2001 American Physical Society

Authors & Affiliations

H. Imai, Y. Shimakawa, and Y. Kubo

  • Fundamental Research Laboratories, NEC Corporation, 34 Miyukigaoka, Tsukuba 305-8501, Japan

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Issue

Vol. 64, Iss. 24 — 15 December 2001

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