Doping-dependent evolution of the electronic structure of La2xSrxCuO4 in the superconducting and metallic phases

A. Ino, C. Kim, M. Nakamura, T. Yoshida, T. Mizokawa, A. Fujimori, Z.-X. Shen, T. Kakeshita, H. Eisaki, and S. Uchida
Phys. Rev. B 65, 094504 – Published 1 February 2002
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Abstract

The electronic structure of the La2xSrxCuO4 (LSCO) system has been studied by angle-resolved photoemission spectroscopy (ARPES). We report on the evolution of the Fermi surface, the superconducting gap, and the band dispersion around the extended saddle point k=(π,0) with hole doping in the superconducting and metallic phases. As hole concentration x decreases, the flat band at (π,0) moves from above the Fermi level (EF) for x>0.2 to below EF for x<0.2, and is further lowered down to x=0.05. From the leading-edge shift of ARPES spectra, the magnitude of the superconducting gap around (π,0) is found to monotonically increase as x decreases from x=0.30 down to x=0.05 even though Tc decreases in the underdoped region, and the superconducting gap appears to smoothly evolve into the normal-state gap at x=0.05. It is shown that the energy scales characterizing these low-energy structures have similar doping dependences. For the heavily overdoped sample (x=0.30), the band dispersion and the ARPES spectral line shape are analyzed using a simple phenomenological self-energy form, and the electronic effective mass enhancement factor m*/mb2 has been found. As the hole concentration decreases, an incoherent component that cannot be described within the simple self-energy analysis grows intense in the high-energy tail of the ARPES peak. Some unusual features of the electronic structure observed for the underdoped region (x0.10) are consistent with numerical works on the stripe model.

  • Received 23 May 2000

DOI:https://doi.org/10.1103/PhysRevB.65.094504

©2002 American Physical Society

Authors & Affiliations

A. Ino1,*, C. Kim2, M. Nakamura3, T. Yoshida1, T. Mizokawa1, A. Fujimori1, Z.-X. Shen2, T. Kakeshita4, H. Eisaki4, and S. Uchida4

  • 1Department of Physics and Department of Complexity Science and Engineering, University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
  • 2Department of Applied Physics and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305
  • 3Department of Physics, Nara University of Education, Takabatake-cho, Nara 630-8528, Japan
  • 4Department of Advanced Materials Science, University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

  • *Present address: Japan Atomic Research Institute (JAERI), SPring-8, Hyogo 679-5148, Japan.

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Vol. 65, Iss. 9 — 1 March 2002

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