Temperature and voltage dependence of the resistance and magnetoresistance in discontinuous double tunnel junctions

F. Fettar, S.-F. Lee, F. Petroff, A. Vaures, P. Holody, L. F. Schelp, and A. Fert
Phys. Rev. B 65, 174415 – Published 29 April 2002
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Abstract

We have studied the electric and magnetotransport properties of Co//Al2O3/CoI/Al2O3//(CoorCu) tunnel double junctions, in which the intermediate CoI layer is either granular or percolated clusters and the top electrode is either Co or Cu. In granular junctions, spin-dependent tunneling with Coulomb-blockade effect was observed. The temperature dependence of the resistance can be attributed to two conduction channels in parallel between electrodes via granules and via other channels such as metallic impurities in the insulating layer. Voltage and temperature dependences of the tunnel magnetoresistance are discussed. The Coulomb blockade and the improvement of the antiparallel alignment at low temperature both enhanced the TMR effects.

  • Received 25 April 2001

DOI:https://doi.org/10.1103/PhysRevB.65.174415

©2002 American Physical Society

Authors & Affiliations

F. Fettar*, S.-F. Lee, F. Petroff, A. Vaures, P. Holody, L. F. Schelp, and A. Fert

  • Unité Mixte de Physique CNRS/Thalès, UMR CNRS 137 associé à l’Université Paris-Sud, Domaine de Corbeville, 91404 Orsay Cedex, France

  • *Corresponding author. Present address: CEA-Grenoble, Département de Recherches Fondamentales sur la matière condensée, SP2M/SPINTEC, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France. FAX: 33 4 38 78 50 97. Electronic address: fettar@cea.fr
  • Present address: Institute of Physics, Academia Sinica, Taipei, Taiwan 115, ROC.
  • Present address: Departamento de Fisica, CCNE, Universidade Federal de Santa Maria, Santa Maria, CEP 97105-900, RS, Brazil.

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Issue

Vol. 65, Iss. 17 — 1 May 2002

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