Polariton dynamics and Bose-Einstein condensation in semiconductor microcavities

D. Porras, C. Ciuti, J. J. Baumberg, and C. Tejedor
Phys. Rev. B 66, 085304 – Published 5 August 2002
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Abstract

We present a theoretical model that allows us to describe the polariton dynamics in a semiconductor microcavity at large densities, for the case of nonresonant excitation. Exciton-polariton scattering from a thermalized exciton reservoir is identified as the main mechanism for relaxation into the lower polariton states. A maximum in the polariton distribution that shifts towards lower energies with increasing pump power or temperature is shown, in agreement with recent experiments. Above a critical pump power, macroscopic occupancies (5×104) can be achieved in the lowest-energy polariton state. Our model predicts the possibility of Bose-Einstein condensation of polaritons, driven by exciton-polariton interaction, at densities well below the saturation density for CdTe microcavities.

  • Received 12 February 2002

DOI:https://doi.org/10.1103/PhysRevB.66.085304

©2002 American Physical Society

Authors & Affiliations

D. Porras1, C. Ciuti2, J. J. Baumberg3, and C. Tejedor1

  • 1Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, 28049 Cantoblanco, Madrid, Spain
  • 2Physics Department, University of California San Diego, 3500 Gilman Drive, La Jolla, California 92093
  • 3Department of Physics & Astronomy, University of Southampton, Southhampton SO17 IBJ, United Kingdom

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Issue

Vol. 66, Iss. 8 — 15 August 2002

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