Systematic first-principles study of impurity hybridization in NiAl

David Djajaputra and Bernard R. Cooper
Phys. Rev. B 66, 205108 – Published 26 November 2002
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Abstract

We have performed a systematic first-principles computational study of the effects of impurity atoms (boron, carbon, nitrogen, oxygen, silicon, phosporus, and sulfur) on the orbital hybridization and bonding properties in the intermetallic alloy NiAl using a full-potential linear muffin-tin orbital method. The matrix elements in momentum space were used to calculate real-space properties: onsite parameters, partial densities of states, and local charges. In impurity atoms that are empirically known to be embrittler (N and O) we found that the 2s orbital is bound to the impurity and therefore does not participate in the covalent bonding. In contrast, the corresponding 2s orbital is found to be delocalized in the cohesion enhancers (B and C). Each of these impurity atoms is found to acquire a net negative local charge in NiAl irrespective of whether they sit in the Ni or Al site. The embrittler therefore reduces the total number of electrons available for covalent bonding by removing some of the electrons from the neighboring Ni or Al atoms and localizing them at the impurity site. We show that these correlations also hold for silicon, phosporus, and sulfur.

  • Received 20 May 2002

DOI:https://doi.org/10.1103/PhysRevB.66.205108

©2002 American Physical Society

Authors & Affiliations

David Djajaputra and Bernard R. Cooper

  • Department of Physics, West Virginia University, P.O. Box 6315, Morgantown, West Virginia 26506-6315

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Issue

Vol. 66, Iss. 20 — 15 November 2002

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