Photoluminescence investigations of two-dimensional hole Landau levels in p-type single AlxGa1xAs/GaAs heterostructures

M. Kubisa, L. Bryja, K. Ryczko, J. Misiewicz, C. Bardot, M. Potemski, G. Ortner, M. Bayer, A. Forchel, and C. B. Sørensen
Phys. Rev. B 67, 035305 – Published 14 January 2003
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Abstract

We study the energy structure of two-dimensional holes in p-type single Al1xGaxAs/GaAs heterojunctions under a perpendicular magnetic field. Photoluminescence measurments with low densities of excitation power reveal rich spectra containing both free and bound-carrier transitions. The experimental results are compared with energies of valence-subband Landau levels calculated using a numerical procedure and good agreement is achieved. Additional lines observed in the energy range of free-carrier recombinations are attributed to excitonic transitions. We also consider the role of many-body effects in photoluminescence spectra.

  • Received 1 August 2002

DOI:https://doi.org/10.1103/PhysRevB.67.035305

©2003 American Physical Society

Authors & Affiliations

M. Kubisa*, L. Bryja, K. Ryczko, and J. Misiewicz

  • Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland

C. Bardot and M. Potemski

  • Grenoble High Magnetic Field Laboratory MPI-FKF/CNRS, 25 Avenue des Martyrs, F-38042 Grenoble Cedex 9, France

G. Ortner, M. Bayer, and A. Forchel

  • Technische Physik, Universität Würzburg, Am Hubland, 97074 Würzburg, Germany

C. B. Sørensen

  • The Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark

  • *Email address: kubisa@if.pwr.wroc.pl
  • Present address: Experimentelle Physik II, Universität Dortmund, D-44221 Dortmund, Germany.

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Vol. 67, Iss. 3 — 15 January 2003

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