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Tuning the electronic properties of boron nitride nanotubes with transverse electric fields: A giant dc Stark effect

K. H. Khoo, M. S. C. Mazzoni, and Steven G. Louie
Phys. Rev. B 69, 201401(R) – Published 7 May 2004
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Abstract

Ab initio calculations show that the band gap of boron nitride (BN) nanotubes can be greatly reduced by a transverse electric field. This gap reduction arises from a mixing of states within the highest occupied molecular orbital and lowest unoccupied molecular orbital complexes and leads to a spatial separation of electrons and holes across the tube diameter. The gap modulation increases with tube diameter and is nearly independent of chirality. For BN nanotubes of diameters of 5 nm or more, a sizable gap reduction should be achievable with laboratory fields. This effect provides a possible way to tune the band gap of BN tubes for various applications.

  • Received 24 October 2003

DOI:https://doi.org/10.1103/PhysRevB.69.201401

©2004 American Physical Society

Authors & Affiliations

K. H. Khoo, M. S. C. Mazzoni, and Steven G. Louie

  • Department of Physics, University of California at Berkeley, Berkeley, California 94720-7300, USA
  • Materials Sciences Division, Lawrence Berkeley Laboratory, Berkeley, California 94720-7300, USA

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Issue

Vol. 69, Iss. 20 — 15 May 2004

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